Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors

Anti-Stokes luminescence - the emission of photons with higher energy than those absorbed – in nanomaterials is widely used for optoelectronic applications. Here the authors observe it in degenerately doped bulk InP and GaAs, indicating it as a more general property of direct bandgap semiconductors....

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Autores principales:	K. Mergenthaler, N. Anttu, N. Vainorius, M. Aghaeipour, S. Lehmann, M. T. Borgström, L. Samuelson, M.-E. Pistol
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/176b775b11d34ba8b6d055ef7338fa9c
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spelling	oai:doaj.org-article:176b775b11d34ba8b6d055ef7338fa9c2021-12-02T17:01:24ZAnti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors10.1038/s41467-017-01817-52041-1723https://doaj.org/article/176b775b11d34ba8b6d055ef7338fa9c2017-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-017-01817-5https://doaj.org/toc/2041-1723Anti-Stokes luminescence - the emission of photons with higher energy than those absorbed – in nanomaterials is widely used for optoelectronic applications. Here the authors observe it in degenerately doped bulk InP and GaAs, indicating it as a more general property of direct bandgap semiconductors.K. MergenthalerN. AnttuN. VainoriusM. AghaeipourS. LehmannM. T. BorgströmL. SamuelsonM.-E. PistolNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q K. Mergenthaler N. Anttu N. Vainorius M. Aghaeipour S. Lehmann M. T. Borgström L. Samuelson M.-E. Pistol Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
description	Anti-Stokes luminescence - the emission of photons with higher energy than those absorbed – in nanomaterials is widely used for optoelectronic applications. Here the authors observe it in degenerately doped bulk InP and GaAs, indicating it as a more general property of direct bandgap semiconductors.
format	article
author	K. Mergenthaler N. Anttu N. Vainorius M. Aghaeipour S. Lehmann M. T. Borgström L. Samuelson M.-E. Pistol
author_facet	K. Mergenthaler N. Anttu N. Vainorius M. Aghaeipour S. Lehmann M. T. Borgström L. Samuelson M.-E. Pistol
author_sort	K. Mergenthaler
title	Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
title_short	Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
title_full	Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
title_fullStr	Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
title_full_unstemmed	Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
title_sort	anti-stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/176b775b11d34ba8b6d055ef7338fa9c
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Anti-Stokes photoluminescence probing k-conservation and thermalization of minority carriers in degenerately doped semiconductors

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