Imperfect two-dimensional topological insulator field-effect transistors
A challenge of using 2D materials for nanoelectronic devices is the need for defect-free lattice supporting efficient carrier transport. Here, the authors show theoretically that 2D topological insulators enable high-performance, low-power field-effect transistors without requiring defect-free mater...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/17c9256e5441409fac675d98bf2b152b |
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