Imperfect two-dimensional topological insulator field-effect transistors

A challenge of using 2D materials for nanoelectronic devices is the need for defect-free lattice supporting efficient carrier transport. Here, the authors show theoretically that 2D topological insulators enable high-performance, low-power field-effect transistors without requiring defect-free mater...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: William G. Vandenberghe, Massimo V. Fischetti
Format: article
Langue:EN
Publié: Nature Portfolio 2017
Sujets:
Q
Accès en ligne:https://doaj.org/article/17c9256e5441409fac675d98bf2b152b
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!