Imperfect two-dimensional topological insulator field-effect transistors

A challenge of using 2D materials for nanoelectronic devices is the need for defect-free lattice supporting efficient carrier transport. Here, the authors show theoretically that 2D topological insulators enable high-performance, low-power field-effect transistors without requiring defect-free mater...

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Detalles Bibliográficos
Autores principales:	William G. Vandenberghe, Massimo V. Fischetti
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/17c9256e5441409fac675d98bf2b152b
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id	oai:doaj.org-article:17c9256e5441409fac675d98bf2b152b
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spelling	oai:doaj.org-article:17c9256e5441409fac675d98bf2b152b2021-12-02T17:06:28ZImperfect two-dimensional topological insulator field-effect transistors10.1038/ncomms141842041-1723https://doaj.org/article/17c9256e5441409fac675d98bf2b152b2017-01-01T00:00:00Zhttps://doi.org/10.1038/ncomms14184https://doaj.org/toc/2041-1723A challenge of using 2D materials for nanoelectronic devices is the need for defect-free lattice supporting efficient carrier transport. Here, the authors show theoretically that 2D topological insulators enable high-performance, low-power field-effect transistors without requiring defect-free materials.William G. VandenbergheMassimo V. FischettiNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q William G. Vandenberghe Massimo V. Fischetti Imperfect two-dimensional topological insulator field-effect transistors
description	A challenge of using 2D materials for nanoelectronic devices is the need for defect-free lattice supporting efficient carrier transport. Here, the authors show theoretically that 2D topological insulators enable high-performance, low-power field-effect transistors without requiring defect-free materials.
format	article
author	William G. Vandenberghe Massimo V. Fischetti
author_facet	William G. Vandenberghe Massimo V. Fischetti
author_sort	William G. Vandenberghe
title	Imperfect two-dimensional topological insulator field-effect transistors
title_short	Imperfect two-dimensional topological insulator field-effect transistors
title_full	Imperfect two-dimensional topological insulator field-effect transistors
title_fullStr	Imperfect two-dimensional topological insulator field-effect transistors
title_full_unstemmed	Imperfect two-dimensional topological insulator field-effect transistors
title_sort	imperfect two-dimensional topological insulator field-effect transistors
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/17c9256e5441409fac675d98bf2b152b
work_keys_str_mv	AT williamgvandenberghe imperfecttwodimensionaltopologicalinsulatorfieldeffecttransistors AT massimovfischetti imperfecttwodimensionaltopologicalinsulatorfieldeffecttransistors
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Imperfect two-dimensional topological insulator field-effect transistors

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