Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress
The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and low-frequency noises (LFN) are analyzed in deta...
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/1993ad0d1e754c7fb7bb79a994f0335b |
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