Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and low-frequency noises (LFN) are analyzed in deta...

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Autores principales:	X. B. Xu, B. Li, Y. Q. Chen, Z. H. Wu, Z. Y. He, L. Liu, S. Z. He, Y. F. En, Y. Huang
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2021
Materias:	AlGaN/GaN high-electron-mobility transistor (HEMT) recovery reverse ESD stress low-frequency noise (LFN) Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/1993ad0d1e754c7fb7bb79a994f0335b
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spelling	oai:doaj.org-article:1993ad0d1e754c7fb7bb79a994f0335b2021-11-19T00:01:48ZAnalysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress2168-673410.1109/JEDS.2020.3040445https://doaj.org/article/1993ad0d1e754c7fb7bb79a994f0335b2021-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9270282/https://doaj.org/toc/2168-6734The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and low-frequency noises (LFN) are analyzed in detail before and after reverse electrostatic discharge (ESD) stress. The experimental results show that the electrical characteristics of the devices gradually degraded as the transmission line pulse (TLP) pules increased. Subsequently, the LFN measurements are performed over the frequency range of 1 Hz–10 KHz by increasing TLP pulses. Finally, the recovery tendency of <italic>DC</italic> (direct current) characteristics and trap density are studied and discussed after resting the device at room temperature for 1 to 3 months. These results physically confirm that the mechanism of the performance degradation and recovery of the devices could be attributed to the trapping and releasing processes of electrons in the p-GaN layer and AlGaN barrier layer of AlGaN/GaN HEMTs, which change the electric field distribution under the gate.X. B. XuB. LiY. Q. ChenZ. H. WuZ. Y. HeL. LiuS. Z. HeY. F. EnY. HuangIEEEarticleAlGaN/GaNhigh-electron-mobility transistor (HEMT)recoveryreverse ESD stresslow-frequency noise (LFN)Electrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 9, Pp 89-95 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	AlGaN/GaN high-electron-mobility transistor (HEMT) recovery reverse ESD stress low-frequency noise (LFN) Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	AlGaN/GaN high-electron-mobility transistor (HEMT) recovery reverse ESD stress low-frequency noise (LFN) Electrical engineering. Electronics. Nuclear engineering TK1-9971 X. B. Xu B. Li Y. Q. Chen Z. H. Wu Z. Y. He L. Liu S. Z. He Y. F. En Y. Huang Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress
description	The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and low-frequency noises (LFN) are analyzed in detail before and after reverse electrostatic discharge (ESD) stress. The experimental results show that the electrical characteristics of the devices gradually degraded as the transmission line pulse (TLP) pules increased. Subsequently, the LFN measurements are performed over the frequency range of 1 Hz–10 KHz by increasing TLP pulses. Finally, the recovery tendency of <italic>DC</italic> (direct current) characteristics and trap density are studied and discussed after resting the device at room temperature for 1 to 3 months. These results physically confirm that the mechanism of the performance degradation and recovery of the devices could be attributed to the trapping and releasing processes of electrons in the p-GaN layer and AlGaN barrier layer of AlGaN/GaN HEMTs, which change the electric field distribution under the gate.
format	article
author	X. B. Xu B. Li Y. Q. Chen Z. H. Wu Z. Y. He L. Liu S. Z. He Y. F. En Y. Huang
author_facet	X. B. Xu B. Li Y. Q. Chen Z. H. Wu Z. Y. He L. Liu S. Z. He Y. F. En Y. Huang
author_sort	X. B. Xu
title	Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress
title_short	Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress
title_full	Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress
title_fullStr	Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress
title_full_unstemmed	Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress
title_sort	analysis of trap and recovery characteristics based on low-frequency noise for e-mode gan hemts under electrostatic discharge stress
publisher	IEEE
publishDate	2021
url	https://doaj.org/article/1993ad0d1e754c7fb7bb79a994f0335b
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Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

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