Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

The ESD effects on the E-mode AlGaN/GaN high-electron mobility transistors (HEMTs) with p-GaN gate are investigated under repetitive TLP pulses. Firstly, the degradation and recovery of output, transfer characteristics, gate-leakage characteristics and low-frequency noises (LFN) are analyzed in deta...

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Autores principales: X. B. Xu, B. Li, Y. Q. Chen, Z. H. Wu, Z. Y. He, L. Liu, S. Z. He, Y. F. En, Y. Huang
Formato: article
Lenguaje:EN
Publicado: IEEE 2021
Materias:
AlGaN/GaN
high-electron-mobility transistor (HEMT)
recovery
reverse ESD stress
low-frequency noise (LFN)
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Acceso en línea:https://doaj.org/article/1993ad0d1e754c7fb7bb79a994f0335b
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