Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study

Abstract In this study, the thermal stability of a contact structure featuring hole-selective tungsten oxide (WOx) and aluminum deposited onto p-type crystalline silicon (c-Si/WOx/Al) was investigated using a combination of transmission line measurements (TLM) and in situ transmission electron micro...

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Autores principales:	Haider Ali, Supriya Koul, Geoffrey Gregory, James Bullock, Ali Javey, Akihiro Kushima, Kristopher O. Davis
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2018
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/1b6078e0de8c48fea93f47dc59241bbc
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spelling	oai:doaj.org-article:1b6078e0de8c48fea93f47dc59241bbc2021-12-02T11:40:16ZThermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study10.1038/s41598-018-31053-w2045-2322https://doaj.org/article/1b6078e0de8c48fea93f47dc59241bbc2018-08-01T00:00:00Zhttps://doi.org/10.1038/s41598-018-31053-whttps://doaj.org/toc/2045-2322Abstract In this study, the thermal stability of a contact structure featuring hole-selective tungsten oxide (WOx) and aluminum deposited onto p-type crystalline silicon (c-Si/WOx/Al) was investigated using a combination of transmission line measurements (TLM) and in situ transmission electron microscopy (TEM) studies. The TEM images provide insight into why the charge carrier transport and recombination characteristics change as a function of temperature, particularly as the samples are annealed at temperatures above 500 °C. In the as-deposited state, a ≈ 2 nm silicon oxide (SiOx) interlayer forms at the c-Si/WOx interface and a ≈ 2–3 nm aluminum oxide (AlOx) interlayer at the WOx/Al interface. When annealing above 500 °C, Al diffusion begins, and above 600 °C complete intermixing of the SiOx, WOx, AlOx and Al layers occurs. This results in a large drop in the contact resistivity, but is the likely reason surface recombination increases at these high temperatures, since a c-Si/Al contact is basically being formed. This work provides some fundamental insight that can help in the development of WOx films as hole-selective rear contacts for p-type solar cells. Furthermore, this study demonstrates that in situ TEM can provide valuable information about thermal stability of transition metal oxides functioning as carrier-selective contacts in silicon solar cells.Haider AliSupriya KoulGeoffrey GregoryJames BullockAli JaveyAkihiro KushimaKristopher O. DavisNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 8, Iss 1, Pp 1-5 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Haider Ali Supriya Koul Geoffrey Gregory James Bullock Ali Javey Akihiro Kushima Kristopher O. Davis Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study
description	Abstract In this study, the thermal stability of a contact structure featuring hole-selective tungsten oxide (WOx) and aluminum deposited onto p-type crystalline silicon (c-Si/WOx/Al) was investigated using a combination of transmission line measurements (TLM) and in situ transmission electron microscopy (TEM) studies. The TEM images provide insight into why the charge carrier transport and recombination characteristics change as a function of temperature, particularly as the samples are annealed at temperatures above 500 °C. In the as-deposited state, a ≈ 2 nm silicon oxide (SiOx) interlayer forms at the c-Si/WOx interface and a ≈ 2–3 nm aluminum oxide (AlOx) interlayer at the WOx/Al interface. When annealing above 500 °C, Al diffusion begins, and above 600 °C complete intermixing of the SiOx, WOx, AlOx and Al layers occurs. This results in a large drop in the contact resistivity, but is the likely reason surface recombination increases at these high temperatures, since a c-Si/Al contact is basically being formed. This work provides some fundamental insight that can help in the development of WOx films as hole-selective rear contacts for p-type solar cells. Furthermore, this study demonstrates that in situ TEM can provide valuable information about thermal stability of transition metal oxides functioning as carrier-selective contacts in silicon solar cells.
format	article
author	Haider Ali Supriya Koul Geoffrey Gregory James Bullock Ali Javey Akihiro Kushima Kristopher O. Davis
author_facet	Haider Ali Supriya Koul Geoffrey Gregory James Bullock Ali Javey Akihiro Kushima Kristopher O. Davis
author_sort	Haider Ali
title	Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study
title_short	Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study
title_full	Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study
title_fullStr	Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study
title_full_unstemmed	Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study
title_sort	thermal stability of hole-selective tungsten oxide: in situ transmission electron microscopy study
publisher	Nature Portfolio
publishDate	2018
url	https://doaj.org/article/1b6078e0de8c48fea93f47dc59241bbc
work_keys_str_mv	AT haiderali thermalstabilityofholeselectivetungstenoxideinsitutransmissionelectronmicroscopystudy AT supriyakoul thermalstabilityofholeselectivetungstenoxideinsitutransmissionelectronmicroscopystudy AT geoffreygregory thermalstabilityofholeselectivetungstenoxideinsitutransmissionelectronmicroscopystudy AT jamesbullock thermalstabilityofholeselectivetungstenoxideinsitutransmissionelectronmicroscopystudy AT alijavey thermalstabilityofholeselectivetungstenoxideinsitutransmissionelectronmicroscopystudy AT akihirokushima thermalstabilityofholeselectivetungstenoxideinsitutransmissionelectronmicroscopystudy AT kristopherodavis thermalstabilityofholeselectivetungstenoxideinsitutransmissionelectronmicroscopystudy
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Thermal Stability of Hole-Selective Tungsten Oxide: In Situ Transmission Electron Microscopy Study

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