Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide

The metal-insulator transition is typically controlled by carrier accumulation or chemical doping. Here, the authors realize an alternative method based on resonant tunnelling in a double quantum well structure of strongly correlated oxides, which offers practical advantages over conventional method...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: R. Yukawa, M. Kobayashi, T. Kanda, D. Shiga, K. Yoshimatsu, S. Ishibashi, M. Minohara, M. Kitamura, K. Horiba, A. F. Santander-Syro, H. Kumigashira
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Q
Acceso en línea:https://doaj.org/article/1c60148978ee42bba1b0405652b5a056
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!