Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide

The metal-insulator transition is typically controlled by carrier accumulation or chemical doping. Here, the authors realize an alternative method based on resonant tunnelling in a double quantum well structure of strongly correlated oxides, which offers practical advantages over conventional method...

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Autores principales:	R. Yukawa, M. Kobayashi, T. Kanda, D. Shiga, K. Yoshimatsu, S. Ishibashi, M. Minohara, M. Kitamura, K. Horiba, A. F. Santander-Syro, H. Kumigashira
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/1c60148978ee42bba1b0405652b5a056
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spelling	oai:doaj.org-article:1c60148978ee42bba1b0405652b5a0562021-12-05T12:23:05ZResonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide10.1038/s41467-021-27327-z2041-1723https://doaj.org/article/1c60148978ee42bba1b0405652b5a0562021-12-01T00:00:00Zhttps://doi.org/10.1038/s41467-021-27327-zhttps://doaj.org/toc/2041-1723The metal-insulator transition is typically controlled by carrier accumulation or chemical doping. Here, the authors realize an alternative method based on resonant tunnelling in a double quantum well structure of strongly correlated oxides, which offers practical advantages over conventional methods.R. YukawaM. KobayashiT. KandaD. ShigaK. YoshimatsuS. IshibashiM. MinoharaM. KitamuraK. HoribaA. F. Santander-SyroH. KumigashiraNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q R. Yukawa M. Kobayashi T. Kanda D. Shiga K. Yoshimatsu S. Ishibashi M. Minohara M. Kitamura K. Horiba A. F. Santander-Syro H. Kumigashira Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide
description	The metal-insulator transition is typically controlled by carrier accumulation or chemical doping. Here, the authors realize an alternative method based on resonant tunnelling in a double quantum well structure of strongly correlated oxides, which offers practical advantages over conventional methods.
format	article
author	R. Yukawa M. Kobayashi T. Kanda D. Shiga K. Yoshimatsu S. Ishibashi M. Minohara M. Kitamura K. Horiba A. F. Santander-Syro H. Kumigashira
author_facet	R. Yukawa M. Kobayashi T. Kanda D. Shiga K. Yoshimatsu S. Ishibashi M. Minohara M. Kitamura K. Horiba A. F. Santander-Syro H. Kumigashira
author_sort	R. Yukawa
title	Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide
title_short	Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide
title_full	Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide
title_fullStr	Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide
title_full_unstemmed	Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide
title_sort	resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/1c60148978ee42bba1b0405652b5a056
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Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide

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