Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide
The metal-insulator transition is typically controlled by carrier accumulation or chemical doping. Here, the authors realize an alternative method based on resonant tunnelling in a double quantum well structure of strongly correlated oxides, which offers practical advantages over conventional method...
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Autores principales: | R. Yukawa, M. Kobayashi, T. Kanda, D. Shiga, K. Yoshimatsu, S. Ishibashi, M. Minohara, M. Kitamura, K. Horiba, A. F. Santander-Syro, H. Kumigashira |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2021
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Materias: | |
Acceso en línea: | https://doaj.org/article/1c60148978ee42bba1b0405652b5a056 |
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