Quasiparticle tunnel electroresistance in superconducting junctions

The non-volatile switching of tunnel electroresistance in ferroelectric junctions provides the basis for memory and neuromorphic computing devices. Rouco et al. show tunnel electroresistance in superconductor-based junctions that arises from a redox rather than ferroelectric mechanism and is enhance...

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Autores principales: V. Rouco, R. El Hage, A. Sander, J. Grandal, K. Seurre, X. Palermo, J. Briatico, S. Collin, J. Trastoy, K. Bouzehouane, A. I. Buzdin, G. Singh, N. Bergeal, C. Feuillet-Palma, J. Lesueur, C. Leon, M. Varela, J. Santamaría, Javier E. Villegas
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/1c9a4114f79e4493a381c2aff0853759
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