Quasiparticle tunnel electroresistance in superconducting junctions

The non-volatile switching of tunnel electroresistance in ferroelectric junctions provides the basis for memory and neuromorphic computing devices. Rouco et al. show tunnel electroresistance in superconductor-based junctions that arises from a redox rather than ferroelectric mechanism and is enhance...

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Autores principales: V. Rouco, R. El Hage, A. Sander, J. Grandal, K. Seurre, X. Palermo, J. Briatico, S. Collin, J. Trastoy, K. Bouzehouane, A. I. Buzdin, G. Singh, N. Bergeal, C. Feuillet-Palma, J. Lesueur, C. Leon, M. Varela, J. Santamaría, Javier E. Villegas
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Lenguaje:EN
Publicado: Nature Portfolio 2020
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Acceso en línea:https://doaj.org/article/1c9a4114f79e4493a381c2aff0853759
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spelling oai:doaj.org-article:1c9a4114f79e4493a381c2aff08537592021-12-02T14:42:48ZQuasiparticle tunnel electroresistance in superconducting junctions10.1038/s41467-020-14379-w2041-1723https://doaj.org/article/1c9a4114f79e4493a381c2aff08537592020-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-14379-whttps://doaj.org/toc/2041-1723The non-volatile switching of tunnel electroresistance in ferroelectric junctions provides the basis for memory and neuromorphic computing devices. Rouco et al. show tunnel electroresistance in superconductor-based junctions that arises from a redox rather than ferroelectric mechanism and is enhanced by superconductivity.V. RoucoR. El HageA. SanderJ. GrandalK. SeurreX. PalermoJ. BriaticoS. CollinJ. TrastoyK. BouzehouaneA. I. BuzdinG. SinghN. BergealC. Feuillet-PalmaJ. LesueurC. LeonM. VarelaJ. SantamaríaJavier E. VillegasNature PortfolioarticleScienceQENNature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
institution DOAJ
collection DOAJ
language EN
topic Science
Q
spellingShingle Science
Q
V. Rouco
R. El Hage
A. Sander
J. Grandal
K. Seurre
X. Palermo
J. Briatico
S. Collin
J. Trastoy
K. Bouzehouane
A. I. Buzdin
G. Singh
N. Bergeal
C. Feuillet-Palma
J. Lesueur
C. Leon
M. Varela
J. Santamaría
Javier E. Villegas
Quasiparticle tunnel electroresistance in superconducting junctions
description The non-volatile switching of tunnel electroresistance in ferroelectric junctions provides the basis for memory and neuromorphic computing devices. Rouco et al. show tunnel electroresistance in superconductor-based junctions that arises from a redox rather than ferroelectric mechanism and is enhanced by superconductivity.
format article
author V. Rouco
R. El Hage
A. Sander
J. Grandal
K. Seurre
X. Palermo
J. Briatico
S. Collin
J. Trastoy
K. Bouzehouane
A. I. Buzdin
G. Singh
N. Bergeal
C. Feuillet-Palma
J. Lesueur
C. Leon
M. Varela
J. Santamaría
Javier E. Villegas
author_facet V. Rouco
R. El Hage
A. Sander
J. Grandal
K. Seurre
X. Palermo
J. Briatico
S. Collin
J. Trastoy
K. Bouzehouane
A. I. Buzdin
G. Singh
N. Bergeal
C. Feuillet-Palma
J. Lesueur
C. Leon
M. Varela
J. Santamaría
Javier E. Villegas
author_sort V. Rouco
title Quasiparticle tunnel electroresistance in superconducting junctions
title_short Quasiparticle tunnel electroresistance in superconducting junctions
title_full Quasiparticle tunnel electroresistance in superconducting junctions
title_fullStr Quasiparticle tunnel electroresistance in superconducting junctions
title_full_unstemmed Quasiparticle tunnel electroresistance in superconducting junctions
title_sort quasiparticle tunnel electroresistance in superconducting junctions
publisher Nature Portfolio
publishDate 2020
url https://doaj.org/article/1c9a4114f79e4493a381c2aff0853759
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