Quasiparticle tunnel electroresistance in superconducting junctions
The non-volatile switching of tunnel electroresistance in ferroelectric junctions provides the basis for memory and neuromorphic computing devices. Rouco et al. show tunnel electroresistance in superconductor-based junctions that arises from a redox rather than ferroelectric mechanism and is enhance...
Guardado en:
Autores principales: | V. Rouco, R. El Hage, A. Sander, J. Grandal, K. Seurre, X. Palermo, J. Briatico, S. Collin, J. Trastoy, K. Bouzehouane, A. I. Buzdin, G. Singh, N. Bergeal, C. Feuillet-Palma, J. Lesueur, C. Leon, M. Varela, J. Santamaría, Javier E. Villegas |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2020
|
Materias: | |
Acceso en línea: | https://doaj.org/article/1c9a4114f79e4493a381c2aff0853759 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Tunnel electroresistance through organic ferroelectrics
por: B. B. Tian, et al.
Publicado: (2016) -
Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
por: Zhongnan Xi, et al.
Publicado: (2017) -
Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
por: Wei Jin Hu, et al.
Publicado: (2016) -
Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
por: H. Wang, et al.
Publicado: (2018) -
Competition between electron pairing and phase coherence in superconducting interfaces
por: G. Singh, et al.
Publicado: (2018)