Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased at the semi-on state, and they suffered from the hot electron stress. The devices of hydrogen poisoning w...
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| Auteurs principaux: | , , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
IEEE
2019
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/1ea23adf467e47d9be76f31c85bb49ab |
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