Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning

We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased at the semi-on state, and they suffered from the hot electron stress. The devices of hydrogen poisoning w...

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Autores principales:	J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	GaN HEMT hydrogen poisoning hot electron stress Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/1ea23adf467e47d9be76f31c85bb49ab
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spelling	oai:doaj.org-article:1ea23adf467e47d9be76f31c85bb49ab2021-11-19T00:00:57ZEffect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning2168-673410.1109/JEDS.2018.2879480https://doaj.org/article/1ea23adf467e47d9be76f31c85bb49ab2019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8521669/https://doaj.org/toc/2168-6734We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased at the semi-on state, and they suffered from the hot electron stress. The devices of hydrogen poisoning were degraded, while there is almost no degradation for the fresh ones. The hot electron stress leads to the significantly positive shift of threshold voltage and the notable decrease of drain-to-source current for the AlGaN/GaN HEMTs of hydrogen poisoning. For the AlGaN/GaN HEMTs of hydrogen poisoning, the trap density increases by about one order of magnitude after the hot electron stress experiment. The physical mechanism can be attributed to electrically active traps due to the dehydrogenation of passivated point defects at AlGaN surface, AlGaN barrier layer, and heterostructure interface. The results of this paper may be useful in the design and application of AlGaN/GaN HEMTs.J. HeY. Q. ChenZ. Y. HeY. F. EnC. LiuY. HuangZ. LiM. H. TangIEEEarticleGaN HEMThydrogen poisoninghot electron stressElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 76-81 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	GaN HEMT hydrogen poisoning hot electron stress Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	GaN HEMT hydrogen poisoning hot electron stress Electrical engineering. Electronics. Nuclear engineering TK1-9971 J. He Y. Q. Chen Z. Y. He Y. F. En C. Liu Y. Huang Z. Li M. H. Tang Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
description	We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased at the semi-on state, and they suffered from the hot electron stress. The devices of hydrogen poisoning were degraded, while there is almost no degradation for the fresh ones. The hot electron stress leads to the significantly positive shift of threshold voltage and the notable decrease of drain-to-source current for the AlGaN/GaN HEMTs of hydrogen poisoning. For the AlGaN/GaN HEMTs of hydrogen poisoning, the trap density increases by about one order of magnitude after the hot electron stress experiment. The physical mechanism can be attributed to electrically active traps due to the dehydrogenation of passivated point defects at AlGaN surface, AlGaN barrier layer, and heterostructure interface. The results of this paper may be useful in the design and application of AlGaN/GaN HEMTs.
format	article
author	J. He Y. Q. Chen Z. Y. He Y. F. En C. Liu Y. Huang Z. Li M. H. Tang
author_facet	J. He Y. Q. Chen Z. Y. He Y. F. En C. Liu Y. Huang Z. Li M. H. Tang
author_sort	J. He
title	Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
title_short	Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
title_full	Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
title_fullStr	Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
title_full_unstemmed	Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
title_sort	effect of hot electron stress on algan/gan hemts of hydrogen poisoning
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/1ea23adf467e47d9be76f31c85bb49ab
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_version_	1718420655734521856

Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning

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