Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning

Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning

We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased at the semi-on state, and they suffered from the hot electron stress. The devices of hydrogen poisoning w...

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Bibliographic Details
Main Authors: J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang
Format: article
Language:EN
Published: IEEE 2019
Subjects:
GaN HEMT
hydrogen poisoning
hot electron stress
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Online Access:https://doaj.org/article/1ea23adf467e47d9be76f31c85bb49ab
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https://doaj.org/article/1ea23adf467e47d9be76f31c85bb49ab

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