Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning. The AlGaN/GaN HEMTs were biased at the semi-on state, and they suffered from the hot electron stress. The devices of hydrogen poisoning w...
Guardado en:
Autores principales: | J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang |
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Formato: | article |
Lenguaje: | EN |
Publicado: |
IEEE
2019
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Materias: | |
Acceso en línea: | https://doaj.org/article/1ea23adf467e47d9be76f31c85bb49ab |
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