Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes

The effect of post-growth annealing treatment of zinc oxide (ZnO) nanorods on the electrical properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are synthesized by the low-temperature aqueous solution growth technique and annealed at temperatures of 400 and 600°C. The as-g...

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Autores principales:	Faraz Sadia Muniza, Jafri Syed Riaz un Nabi, Khan Hashim Raza, Shah Wakeel, Alvi Naveed ul Hassan, Wahab Qamar ul, Nur Omer
Formato:	article
Lenguaje:	EN
Publicado:	De Gruyter 2021
Materias:	zno nanorods heterojunction annealing electrical characterization interface states Physics QC1-999
Acceso en línea:	https://doaj.org/article/1fd720e014cf41f6a33fc7c310064665
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spelling	oai:doaj.org-article:1fd720e014cf41f6a33fc7c3100646652021-12-05T14:11:02ZEffect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes2391-547110.1515/phys-2021-0053https://doaj.org/article/1fd720e014cf41f6a33fc7c3100646652021-08-01T00:00:00Zhttps://doi.org/10.1515/phys-2021-0053https://doaj.org/toc/2391-5471The effect of post-growth annealing treatment of zinc oxide (ZnO) nanorods on the electrical properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are synthesized by the low-temperature aqueous solution growth technique and annealed at temperatures of 400 and 600°C. The as-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characterization of the ZnO/Si heterojunction diode is done by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. The barrier height (ϕ B), ideality factor (n), doping concentration and density of interface states (N SS) are extracted. All HJDs exhibited a nonlinear behavior with rectification factors of 23, 1,596 and 309 at ±5 V for the as-grown, 400 and 600°C-annealed nanorod HJDs, respectively. Barrier heights of 0.81 and 0.63 V are obtained for HJDs of 400 and 600°C-annealed nanorods, respectively. The energy distribution of the interface state density has been investigated and found to be in the range 0.70 × 1010 to 1.05 × 1012 eV/cm2 below the conduction band from E C = 0.03 to E C = 0.58 eV. The highest density of interface states is observed in HJDs of 600°C-annealed nanorods. Overall improved behavior is observed for the heterojunctions diodes of 400°C-annealed ZnO nanorods.Faraz Sadia MunizaJafri Syed Riaz un NabiKhan Hashim RazaShah WakeelAlvi Naveed ul HassanWahab Qamar ulNur OmerDe Gruyterarticlezno nanorodsheterojunctionannealingelectrical characterizationinterface statesPhysicsQC1-999ENOpen Physics, Vol 19, Iss 1, Pp 467-476 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	zno nanorods heterojunction annealing electrical characterization interface states Physics QC1-999
spellingShingle	zno nanorods heterojunction annealing electrical characterization interface states Physics QC1-999 Faraz Sadia Muniza Jafri Syed Riaz un Nabi Khan Hashim Raza Shah Wakeel Alvi Naveed ul Hassan Wahab Qamar ul Nur Omer Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
description	The effect of post-growth annealing treatment of zinc oxide (ZnO) nanorods on the electrical properties of their heterojunction diodes (HJDs) is investigated. ZnO nanorods are synthesized by the low-temperature aqueous solution growth technique and annealed at temperatures of 400 and 600°C. The as-grown and annealed nanorods are studied by scanning electron microscopy (SEM) and photoluminescence (PL) spectroscopy. Electrical characterization of the ZnO/Si heterojunction diode is done by current–voltage (I–V) and capacitance–voltage (C–V) measurements at room temperature. The barrier height (ϕ B), ideality factor (n), doping concentration and density of interface states (N SS) are extracted. All HJDs exhibited a nonlinear behavior with rectification factors of 23, 1,596 and 309 at ±5 V for the as-grown, 400 and 600°C-annealed nanorod HJDs, respectively. Barrier heights of 0.81 and 0.63 V are obtained for HJDs of 400 and 600°C-annealed nanorods, respectively. The energy distribution of the interface state density has been investigated and found to be in the range 0.70 × 1010 to 1.05 × 1012 eV/cm2 below the conduction band from E C = 0.03 to E C = 0.58 eV. The highest density of interface states is observed in HJDs of 600°C-annealed nanorods. Overall improved behavior is observed for the heterojunctions diodes of 400°C-annealed ZnO nanorods.
format	article
author	Faraz Sadia Muniza Jafri Syed Riaz un Nabi Khan Hashim Raza Shah Wakeel Alvi Naveed ul Hassan Wahab Qamar ul Nur Omer
author_facet	Faraz Sadia Muniza Jafri Syed Riaz un Nabi Khan Hashim Raza Shah Wakeel Alvi Naveed ul Hassan Wahab Qamar ul Nur Omer
author_sort	Faraz Sadia Muniza
title	Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
title_short	Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
title_full	Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
title_fullStr	Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
title_full_unstemmed	Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes
title_sort	effect of annealing temperature on the interface state density of n-zno nanorod/p-si heterojunction diodes
publisher	De Gruyter
publishDate	2021
url	https://doaj.org/article/1fd720e014cf41f6a33fc7c310064665
work_keys_str_mv	AT farazsadiamuniza effectofannealingtemperatureontheinterfacestatedensityofnznonanorodpsiheterojunctiondiodes AT jafrisyedriazunnabi effectofannealingtemperatureontheinterfacestatedensityofnznonanorodpsiheterojunctiondiodes AT khanhashimraza effectofannealingtemperatureontheinterfacestatedensityofnznonanorodpsiheterojunctiondiodes AT shahwakeel effectofannealingtemperatureontheinterfacestatedensityofnznonanorodpsiheterojunctiondiodes AT alvinaveedulhassan effectofannealingtemperatureontheinterfacestatedensityofnznonanorodpsiheterojunctiondiodes AT wahabqamarul effectofannealingtemperatureontheinterfacestatedensityofnznonanorodpsiheterojunctiondiodes AT nuromer effectofannealingtemperatureontheinterfacestatedensityofnznonanorodpsiheterojunctiondiodes
_version_	1718371463569866752

Effect of annealing temperature on the interface state density of n-ZnO nanorod/p-Si heterojunction diodes

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