A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes

We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching. The on-current (<inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ on}}$ </tex-...

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Autores principales:	Chenhe Liu, Qinghua Ren, Zhixi Chen, Lantian Zhao, Chang Liu, Qiang Liu, Wenjie Yu, Xinke Liu, Qing-Tai Zhao
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2019
Materias:	TFET SOI ambipolar low power Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/20a0c3ca7938449aa55030c916ec1985
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spelling	oai:doaj.org-article:20a0c3ca7938449aa55030c916ec19852021-11-19T00:01:15ZA T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes2168-673410.1109/JEDS.2019.2947695https://doaj.org/article/20a0c3ca7938449aa55030c916ec19852019-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8871345/https://doaj.org/toc/2168-6734We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching. The on-current (<inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ on}}$ </tex-math></inline-formula>)/off-current (<inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ off}}$ </tex-math></inline-formula>) ratio reaches very high value of <inline-formula> <tex-math notation="LaTeX">$\sim 10^{8}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ ds}}= - 0.5$ </tex-math></inline-formula> V with a smaller tunneling junction width at the drain. The innovative T-shape design allows integration of both TFET and metal-oxide semiconductor field-effect transistors (MOSFET) operation modes in one structure. Both TFET and MOSFET operation modes are experimentally demonstrated in this device structure, which provide the implementation of the selector function with the single device.Chenhe LiuQinghua RenZhixi ChenLantian ZhaoChang LiuQiang LiuWenjie YuXinke LiuQing-Tai ZhaoIEEEarticleTFETSOIambipolarlow powerElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 7, Pp 1114-1118 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	TFET SOI ambipolar low power Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	TFET SOI ambipolar low power Electrical engineering. Electronics. Nuclear engineering TK1-9971 Chenhe Liu Qinghua Ren Zhixi Chen Lantian Zhao Chang Liu Qiang Liu Wenjie Yu Xinke Liu Qing-Tai Zhao A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes
description	We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching. The on-current (<inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ on}}$ </tex-math></inline-formula>)/off-current (<inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ off}}$ </tex-math></inline-formula>) ratio reaches very high value of <inline-formula> <tex-math notation="LaTeX">$\sim 10^{8}$ </tex-math></inline-formula> at <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ ds}}= - 0.5$ </tex-math></inline-formula> V with a smaller tunneling junction width at the drain. The innovative T-shape design allows integration of both TFET and metal-oxide semiconductor field-effect transistors (MOSFET) operation modes in one structure. Both TFET and MOSFET operation modes are experimentally demonstrated in this device structure, which provide the implementation of the selector function with the single device.
format	article
author	Chenhe Liu Qinghua Ren Zhixi Chen Lantian Zhao Chang Liu Qiang Liu Wenjie Yu Xinke Liu Qing-Tai Zhao
author_facet	Chenhe Liu Qinghua Ren Zhixi Chen Lantian Zhao Chang Liu Qiang Liu Wenjie Yu Xinke Liu Qing-Tai Zhao
author_sort	Chenhe Liu
title	A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes
title_short	A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes
title_full	A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes
title_fullStr	A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes
title_full_unstemmed	A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes
title_sort	t-shaped soi tunneling field-effect transistor with novel operation modes
publisher	IEEE
publishDate	2019
url	https://doaj.org/article/20a0c3ca7938449aa55030c916ec1985
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A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes

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