A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes
We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching. The on-current (<inline-formula> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ on}}$ </tex-...
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| Autores principales: | , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/20a0c3ca7938449aa55030c916ec1985 |
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