Contact HTSC semiconductor for diode detectors: role of surface states in quasi-static regime
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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oai:doaj.org-article:2173ea15deec49459447d3e0c49bf2092021-11-21T12:13:31ZContact HTSC semiconductor for diode detectors: role of surface states in quasi-static regime2537-63651810-648Xhttps://doaj.org/article/2173ea15deec49459447d3e0c49bf2092005-01-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3068https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365 Cherner, IacovD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 1, Pp 94-97 (2005) |
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DOAJ |
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EN |
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Physics QC1-999 Electronics TK7800-8360 |
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Physics QC1-999 Electronics TK7800-8360 Cherner, Iacov Contact HTSC semiconductor for diode detectors: role of surface states in quasi-static regime |
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article |
author |
Cherner, Iacov |
author_facet |
Cherner, Iacov |
author_sort |
Cherner, Iacov |
title |
Contact HTSC semiconductor for diode detectors: role of surface states in quasi-static regime |
title_short |
Contact HTSC semiconductor for diode detectors: role of surface states in quasi-static regime |
title_full |
Contact HTSC semiconductor for diode detectors: role of surface states in quasi-static regime |
title_fullStr |
Contact HTSC semiconductor for diode detectors: role of surface states in quasi-static regime |
title_full_unstemmed |
Contact HTSC semiconductor for diode detectors: role of surface states in quasi-static regime |
title_sort |
contact htsc semiconductor for diode detectors: role of surface states in quasi-static regime |
publisher |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies |
publishDate |
2005 |
url |
https://doaj.org/article/2173ea15deec49459447d3e0c49bf209 |
work_keys_str_mv |
AT cherneriacov contacthtscsemiconductorfordiodedetectorsroleofsurfacestatesinquasistaticregime |
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1718419112483356672 |