Tunnel field-effect transistors for sensitive terahertz detection
Here, a strong nonlinearity of the gate-induced tunnel junction in bilayer graphene is used for efficient terahertz detection. The improved signal-to-noise ratio, as compared to conventional detectors, offers the application of steep-switching transistors in terahertz technology.
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| Autores principales: | , , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/22a23b434923410ba4e7ae2bf487141c |
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