Tunnel field-effect transistors for sensitive terahertz detection

Here, a strong nonlinearity of the gate-induced tunnel junction in bilayer graphene is used for efficient terahertz detection. The improved signal-to-noise ratio, as compared to conventional detectors, offers the application of steep-switching transistors in terahertz technology.

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Autores principales:	I. Gayduchenko, S. G. Xu, G. Alymov, M. Moskotin, I. Tretyakov, T. Taniguchi, K. Watanabe, G. Goltsman, A. K. Geim, G. Fedorov, D. Svintsov, D. A. Bandurin
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/22a23b434923410ba4e7ae2bf487141c
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spelling	oai:doaj.org-article:22a23b434923410ba4e7ae2bf487141c2021-12-02T10:49:08ZTunnel field-effect transistors for sensitive terahertz detection10.1038/s41467-020-20721-z2041-1723https://doaj.org/article/22a23b434923410ba4e7ae2bf487141c2021-01-01T00:00:00Zhttps://doi.org/10.1038/s41467-020-20721-zhttps://doaj.org/toc/2041-1723Here, a strong nonlinearity of the gate-induced tunnel junction in bilayer graphene is used for efficient terahertz detection. The improved signal-to-noise ratio, as compared to conventional detectors, offers the application of steep-switching transistors in terahertz technology.I. GayduchenkoS. G. XuG. AlymovM. MoskotinI. TretyakovT. TaniguchiK. WatanabeG. GoltsmanA. K. GeimG. FedorovD. SvintsovD. A. BandurinNature PortfolioarticleScienceQENNature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q I. Gayduchenko S. G. Xu G. Alymov M. Moskotin I. Tretyakov T. Taniguchi K. Watanabe G. Goltsman A. K. Geim G. Fedorov D. Svintsov D. A. Bandurin Tunnel field-effect transistors for sensitive terahertz detection
description	Here, a strong nonlinearity of the gate-induced tunnel junction in bilayer graphene is used for efficient terahertz detection. The improved signal-to-noise ratio, as compared to conventional detectors, offers the application of steep-switching transistors in terahertz technology.
format	article
author	I. Gayduchenko S. G. Xu G. Alymov M. Moskotin I. Tretyakov T. Taniguchi K. Watanabe G. Goltsman A. K. Geim G. Fedorov D. Svintsov D. A. Bandurin
author_facet	I. Gayduchenko S. G. Xu G. Alymov M. Moskotin I. Tretyakov T. Taniguchi K. Watanabe G. Goltsman A. K. Geim G. Fedorov D. Svintsov D. A. Bandurin
author_sort	I. Gayduchenko
title	Tunnel field-effect transistors for sensitive terahertz detection
title_short	Tunnel field-effect transistors for sensitive terahertz detection
title_full	Tunnel field-effect transistors for sensitive terahertz detection
title_fullStr	Tunnel field-effect transistors for sensitive terahertz detection
title_full_unstemmed	Tunnel field-effect transistors for sensitive terahertz detection
title_sort	tunnel field-effect transistors for sensitive terahertz detection
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/22a23b434923410ba4e7ae2bf487141c
work_keys_str_mv	AT igayduchenko tunnelfieldeffecttransistorsforsensitiveterahertzdetection AT sgxu tunnelfieldeffecttransistorsforsensitiveterahertzdetection AT galymov tunnelfieldeffecttransistorsforsensitiveterahertzdetection AT mmoskotin tunnelfieldeffecttransistorsforsensitiveterahertzdetection AT itretyakov tunnelfieldeffecttransistorsforsensitiveterahertzdetection AT ttaniguchi tunnelfieldeffecttransistorsforsensitiveterahertzdetection AT kwatanabe tunnelfieldeffecttransistorsforsensitiveterahertzdetection AT ggoltsman tunnelfieldeffecttransistorsforsensitiveterahertzdetection AT akgeim tunnelfieldeffecttransistorsforsensitiveterahertzdetection AT gfedorov tunnelfieldeffecttransistorsforsensitiveterahertzdetection AT dsvintsov tunnelfieldeffecttransistorsforsensitiveterahertzdetection AT dabandurin tunnelfieldeffecttransistorsforsensitiveterahertzdetection
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Tunnel field-effect transistors for sensitive terahertz detection

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