Tunnel field-effect transistors for sensitive terahertz detection

Tunnel field-effect transistors for sensitive terahertz detection

Here, a strong nonlinearity of the gate-induced tunnel junction in bilayer graphene is used for efficient terahertz detection. The improved signal-to-noise ratio, as compared to conventional detectors, offers the application of steep-switching transistors in terahertz technology.

Guardado en:
Detalles Bibliográficos
Autores principales: I. Gayduchenko, S. G. Xu, G. Alymov, M. Moskotin, I. Tretyakov, T. Taniguchi, K. Watanabe, G. Goltsman, A. K. Geim, G. Fedorov, D. Svintsov, D. A. Bandurin
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Science
Q
Acceso en línea:https://doaj.org/article/22a23b434923410ba4e7ae2bf487141c
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Ejemplares similares