Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet

Abstract We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy. Using transmission electron microscopy and scanning electron microscopy images, w...

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Autores principales: Min Baik, Ji-hoon Kyhm, Hang-Kyu Kang, Kwang-Sik Jeong, Jong Su Kim, Mann-Ho Cho, Jin Dong Song
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/22f60ddd39664fe28bc1d2c5fff12f56
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