Formation of Graphite-Copper/N-Silicon Schottky Photovoltaic Diodes Using Different Plasma Technologies

Plasma spraying and magnetron sputtering were used to form graphite–copper films on an n-type silicon surface. The main objective of this work was to compare the properties of the obtained graphite–copper Schottky photodiodes prepared using two different layer formation methods and to evaluate the i...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Žydrūnas Kavaliauskas, Vilius Dovydaitis, Romualdas Kėželis, Liutauras Marcinauskas, Vitas Valinčius, Arūnas Baltušnikas, Aleksandras Iljinas, Giedrius Gecevičius, Vytautas Čapas
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
T
Acceso en línea:https://doaj.org/article/2300ac8ddf954eb3a7dfa3b3c55166d5
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!