Growth and characterization of W thin films with controlled Ne and Ar contents deposited by bipolar HiPIMS

This work is focused on controlling and optimizing the inclusion of neon (Ne) and argon (Ar) impurities in tungsten (W) reference coatings. A tungsten target has been sputtered in monopolar and bipolar High Power Impulse Magnetron Sputtering (HiPIMS) operation modes, in Ar-Ne gas mixture. It has bee...

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Autores principales:	V. Tiron, G. Bulai, C. Costin, I.-L. Velicu, P. Dincă, D. Iancu, I. Burducea
Formato:	article
Lenguaje:	EN
Publicado:	Elsevier 2021
Materias:	Bipolar HiPIMS deposition W-Ne-Ar coatings Plasma surface-interaction Plasma diagnostics RBS spectroscopy Nuclear engineering. Atomic power TK9001-9401
Acceso en línea:	https://doaj.org/article/2342186eac744a2d924e9fcf39ca1459
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spelling	oai:doaj.org-article:2342186eac744a2d924e9fcf39ca14592021-11-14T04:33:27ZGrowth and characterization of W thin films with controlled Ne and Ar contents deposited by bipolar HiPIMS2352-179110.1016/j.nme.2021.101091https://doaj.org/article/2342186eac744a2d924e9fcf39ca14592021-12-01T00:00:00Zhttp://www.sciencedirect.com/science/article/pii/S2352179121001575https://doaj.org/toc/2352-1791This work is focused on controlling and optimizing the inclusion of neon (Ne) and argon (Ar) impurities in tungsten (W) reference coatings. A tungsten target has been sputtered in monopolar and bipolar High Power Impulse Magnetron Sputtering (HiPIMS) operation modes, in Ar-Ne gas mixture. It has been found that the process of noble gas retention in W thin layers is strongly dependent on both ion energy and average flux to the substrate. The ion energy can be accurately controlled by the amplitude of the positive voltage pulse while the average ion flux can be controlled by the duration of the negative pulse. Measurements of the plasma potential in front of the substrate and the ion saturation current at the substrate position allow explaining the mechanism of ion acceleration and the control of ion energy and flux. The effect of the pulsing configuration on the microstructure of the co-deposited films has been investigated by X-ray Diffractometry, Scanning Electron Microscopy and Atomic Force Microscopy, while the amount of noble gas enclosed in the coatings has been measured by Non-Rutherford Backscattering Spectrometry. Ne and Ar amount in the W co-deposited layers increases up to 3.0 at.% each as the amplitude of the positive pulse increases to + 300 V or the negative pulse duration decreases to 3 µs. The highest film crystallinity, with W(110) preferential growth, has been obtained for a positive pulse voltage of + 200 V and a negative pulse duration of 5 µs. The thickness of the deposited layers ranges between 350 nm in bipolar HiPIMS with a positive pulse voltage of + 300 V and 550 nm in monopolar HiPIMS.V. TironG. BulaiC. CostinI.-L. VelicuP. DincăD. IancuI. BurduceaElsevierarticleBipolar HiPIMS depositionW-Ne-Ar coatingsPlasma surface-interactionPlasma diagnosticsRBS spectroscopyNuclear engineering. Atomic powerTK9001-9401ENNuclear Materials and Energy, Vol 29, Iss , Pp 101091- (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Bipolar HiPIMS deposition W-Ne-Ar coatings Plasma surface-interaction Plasma diagnostics RBS spectroscopy Nuclear engineering. Atomic power TK9001-9401
spellingShingle	Bipolar HiPIMS deposition W-Ne-Ar coatings Plasma surface-interaction Plasma diagnostics RBS spectroscopy Nuclear engineering. Atomic power TK9001-9401 V. Tiron G. Bulai C. Costin I.-L. Velicu P. Dincă D. Iancu I. Burducea Growth and characterization of W thin films with controlled Ne and Ar contents deposited by bipolar HiPIMS
description	This work is focused on controlling and optimizing the inclusion of neon (Ne) and argon (Ar) impurities in tungsten (W) reference coatings. A tungsten target has been sputtered in monopolar and bipolar High Power Impulse Magnetron Sputtering (HiPIMS) operation modes, in Ar-Ne gas mixture. It has been found that the process of noble gas retention in W thin layers is strongly dependent on both ion energy and average flux to the substrate. The ion energy can be accurately controlled by the amplitude of the positive voltage pulse while the average ion flux can be controlled by the duration of the negative pulse. Measurements of the plasma potential in front of the substrate and the ion saturation current at the substrate position allow explaining the mechanism of ion acceleration and the control of ion energy and flux. The effect of the pulsing configuration on the microstructure of the co-deposited films has been investigated by X-ray Diffractometry, Scanning Electron Microscopy and Atomic Force Microscopy, while the amount of noble gas enclosed in the coatings has been measured by Non-Rutherford Backscattering Spectrometry. Ne and Ar amount in the W co-deposited layers increases up to 3.0 at.% each as the amplitude of the positive pulse increases to + 300 V or the negative pulse duration decreases to 3 µs. The highest film crystallinity, with W(110) preferential growth, has been obtained for a positive pulse voltage of + 200 V and a negative pulse duration of 5 µs. The thickness of the deposited layers ranges between 350 nm in bipolar HiPIMS with a positive pulse voltage of + 300 V and 550 nm in monopolar HiPIMS.
format	article
author	V. Tiron G. Bulai C. Costin I.-L. Velicu P. Dincă D. Iancu I. Burducea
author_facet	V. Tiron G. Bulai C. Costin I.-L. Velicu P. Dincă D. Iancu I. Burducea
author_sort	V. Tiron
title	Growth and characterization of W thin films with controlled Ne and Ar contents deposited by bipolar HiPIMS
title_short	Growth and characterization of W thin films with controlled Ne and Ar contents deposited by bipolar HiPIMS
title_full	Growth and characterization of W thin films with controlled Ne and Ar contents deposited by bipolar HiPIMS
title_fullStr	Growth and characterization of W thin films with controlled Ne and Ar contents deposited by bipolar HiPIMS
title_full_unstemmed	Growth and characterization of W thin films with controlled Ne and Ar contents deposited by bipolar HiPIMS
title_sort	growth and characterization of w thin films with controlled ne and ar contents deposited by bipolar hipims
publisher	Elsevier
publishDate	2021
url	https://doaj.org/article/2342186eac744a2d924e9fcf39ca1459
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Growth and characterization of W thin films with controlled Ne and Ar contents deposited by bipolar HiPIMS

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