Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
Abstract Resistive-memory devices promise to revolutionize modern computer architecture eliminating the data-shuttling bottleneck between the memory and processing unit. Recent years have seen a surge of experimental demonstrations of such devices built upon two-dimensional materials based metal–ins...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/2402eb2621c8466d9c9bffa7ece879cd |
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