Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes

Abstract Resistive-memory devices promise to revolutionize modern computer architecture eliminating the data-shuttling bottleneck between the memory and processing unit. Recent years have seen a surge of experimental demonstrations of such devices built upon two-dimensional materials based metal–ins...

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Autores principales:	Sanchali Mitra, Arnab Kabiraj, Santanu Mahapatra
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/2402eb2621c8466d9c9bffa7ece879cd
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spelling	oai:doaj.org-article:2402eb2621c8466d9c9bffa7ece879cd2021-12-02T11:44:49ZTheory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes10.1038/s41699-021-00209-02397-7132https://doaj.org/article/2402eb2621c8466d9c9bffa7ece879cd2021-03-01T00:00:00Zhttps://doi.org/10.1038/s41699-021-00209-0https://doaj.org/toc/2397-7132Abstract Resistive-memory devices promise to revolutionize modern computer architecture eliminating the data-shuttling bottleneck between the memory and processing unit. Recent years have seen a surge of experimental demonstrations of such devices built upon two-dimensional materials based metal–insulator–metal structures. However, the fundamental mechanism of nonvolatile resistive switching has remained elusive. Here, we conduct reactive molecular dynamics simulations for a sulfur vacancy inhabited monolayer molybdenum disulfide-based device with inert electrode systems to gain insight into such phenomena. We observe that with the application of a suitable electric field, at the vacancy positions, the sulfur atom from the other plane pops and gets arrested in the plane of the molybdenum atoms. Rigorous first principles based calculations surprisingly reveal localized metallic states (virtual filament) and stronger chemical bonding for this new atomic arrangement, explaining the nonvolatile resistive switching. We further observe that localized Joule heating plays a crucial role in restoring the popped sulfur atom to its original position. The proposed theory, which delineates both unipolar and bipolar switching, may provide useful guidelines for designing high-performance resistive-memory-based computing architecture.Sanchali MitraArnab KabirajSantanu MahapatraNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-11 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 Sanchali Mitra Arnab Kabiraj Santanu Mahapatra Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
description	Abstract Resistive-memory devices promise to revolutionize modern computer architecture eliminating the data-shuttling bottleneck between the memory and processing unit. Recent years have seen a surge of experimental demonstrations of such devices built upon two-dimensional materials based metal–insulator–metal structures. However, the fundamental mechanism of nonvolatile resistive switching has remained elusive. Here, we conduct reactive molecular dynamics simulations for a sulfur vacancy inhabited monolayer molybdenum disulfide-based device with inert electrode systems to gain insight into such phenomena. We observe that with the application of a suitable electric field, at the vacancy positions, the sulfur atom from the other plane pops and gets arrested in the plane of the molybdenum atoms. Rigorous first principles based calculations surprisingly reveal localized metallic states (virtual filament) and stronger chemical bonding for this new atomic arrangement, explaining the nonvolatile resistive switching. We further observe that localized Joule heating plays a crucial role in restoring the popped sulfur atom to its original position. The proposed theory, which delineates both unipolar and bipolar switching, may provide useful guidelines for designing high-performance resistive-memory-based computing architecture.
format	article
author	Sanchali Mitra Arnab Kabiraj Santanu Mahapatra
author_facet	Sanchali Mitra Arnab Kabiraj Santanu Mahapatra
author_sort	Sanchali Mitra
title	Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
title_short	Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
title_full	Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
title_fullStr	Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
title_full_unstemmed	Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
title_sort	theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/2402eb2621c8466d9c9bffa7ece879cd
work_keys_str_mv	AT sanchalimitra theoryofnonvolatileresistiveswitchinginmonolayermolybdenumdisulfidewithpassiveelectrodes AT arnabkabiraj theoryofnonvolatileresistiveswitchinginmonolayermolybdenumdisulfidewithpassiveelectrodes AT santanumahapatra theoryofnonvolatileresistiveswitchinginmonolayermolybdenumdisulfidewithpassiveelectrodes
_version_	1718395270823149568

Theory of nonvolatile resistive switching in monolayer molybdenum disulfide with passive electrodes

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