Disorder compensation controls doping efficiency in organic semiconductors
Though conductivity doping in organic semiconductors has been widely studied in organic electronics, a clear mechanistic picture that explains the phenomenon is still lacking. Here, the authors report a theoretical approach to elucidate the role of disorder compensation in doped organic materials.
Enregistré dans:
Auteurs principaux: | Artem Fediai, Franz Symalla, Pascal Friederich, Wolfgang Wenzel |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2019
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/24d2f068039e48dd87f2a1db6ff4fe21 |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Elementary steps in electrical doping of organic semiconductors
par: Max L. Tietze, et autres
Publié: (2018) -
Publisher Correction: Elementary steps in electrical doping of organic semiconductors
par: Max L. Tietze, et autres
Publié: (2018) -
Madelung and Hubbard interactions in polaron band model of doped organic semiconductors
par: Rui-Qi Png, et autres
Publié: (2016) -
Critical charge transport networks in doped organic semiconductors
par: Andreas Hofacker
Publié: (2020) -
A universal Urbach rule for disordered organic semiconductors
par: Christina Kaiser, et autres
Publié: (2021)