Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases

High-density phases of TiO<sub>2</sub>, such as rutile and high-pressure TiO<sub>2</sub>-II, have attracted interest as materials with high dielectric constant and refractive index values, while combinations of TiO<sub>2</sub>-II with anatase and rutile have been...

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Autores principales: Kristel Möls, Lauri Aarik, Hugo Mändar, Aarne Kasikov, Taivo Jõgiaas, Aivar Tarre, Jaan Aarik
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Publicado: MDPI AG 2021
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spelling oai:doaj.org-article:254cd2b1dc7e4b5188ee6668084d8a4b2021-11-25T17:15:31ZInfluence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases10.3390/coatings111112802079-6412https://doaj.org/article/254cd2b1dc7e4b5188ee6668084d8a4b2021-10-01T00:00:00Zhttps://www.mdpi.com/2079-6412/11/11/1280https://doaj.org/toc/2079-6412High-density phases of TiO<sub>2</sub>, such as rutile and high-pressure TiO<sub>2</sub>-II, have attracted interest as materials with high dielectric constant and refractive index values, while combinations of TiO<sub>2</sub>-II with anatase and rutile have been considered promising materials for catalytic applications. In this work, the atomic layer deposition of TiO<sub>2</sub> on α-Al<sub>2</sub>O<sub>3</sub> (0 0 0 1) (c-sapphire) was used to grow thin films containing different combinations of TiO<sub>2</sub>-II, anatase, and rutile, and to investigate the properties of the films. The results obtained demonstrate that in a temperature range of 300–400 °C, where transition from anatase to TiO<sub>2</sub>-II and rutile growth occurs in the films deposited on c-sapphire, the phase composition and other properties of a film depend significantly on the film thickness and ALD process time parameters. The changes in the phase composition, related to formation of the TiO<sub>2</sub>-II phase, caused an increase in the density and refractive index, minor narrowing of the optical bandgap, and an increase in the hardness of the films deposited on c-sapphire at T<sub>G</sub> ≥ 400 °C. These properties, together with high catalytic efficiency of mixed TiO<sub>2</sub>-II and anatase phases, as reported earlier, make the films promising for application in various functional coatings.Kristel MölsLauri AarikHugo MändarAarne KasikovTaivo JõgiaasAivar TarreJaan AarikMDPI AGarticletitanium dioxidethin filmsatomic layer depositionanataserutileTiO<sub>2</sub>-IIEngineering (General). Civil engineering (General)TA1-2040ENCoatings, Vol 11, Iss 1280, p 1280 (2021)
institution DOAJ
collection DOAJ
language EN
topic titanium dioxide
thin films
atomic layer deposition
anatase
rutile
TiO<sub>2</sub>-II
Engineering (General). Civil engineering (General)
TA1-2040
spellingShingle titanium dioxide
thin films
atomic layer deposition
anatase
rutile
TiO<sub>2</sub>-II
Engineering (General). Civil engineering (General)
TA1-2040
Kristel Möls
Lauri Aarik
Hugo Mändar
Aarne Kasikov
Taivo Jõgiaas
Aivar Tarre
Jaan Aarik
Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases
description High-density phases of TiO<sub>2</sub>, such as rutile and high-pressure TiO<sub>2</sub>-II, have attracted interest as materials with high dielectric constant and refractive index values, while combinations of TiO<sub>2</sub>-II with anatase and rutile have been considered promising materials for catalytic applications. In this work, the atomic layer deposition of TiO<sub>2</sub> on α-Al<sub>2</sub>O<sub>3</sub> (0 0 0 1) (c-sapphire) was used to grow thin films containing different combinations of TiO<sub>2</sub>-II, anatase, and rutile, and to investigate the properties of the films. The results obtained demonstrate that in a temperature range of 300–400 °C, where transition from anatase to TiO<sub>2</sub>-II and rutile growth occurs in the films deposited on c-sapphire, the phase composition and other properties of a film depend significantly on the film thickness and ALD process time parameters. The changes in the phase composition, related to formation of the TiO<sub>2</sub>-II phase, caused an increase in the density and refractive index, minor narrowing of the optical bandgap, and an increase in the hardness of the films deposited on c-sapphire at T<sub>G</sub> ≥ 400 °C. These properties, together with high catalytic efficiency of mixed TiO<sub>2</sub>-II and anatase phases, as reported earlier, make the films promising for application in various functional coatings.
format article
author Kristel Möls
Lauri Aarik
Hugo Mändar
Aarne Kasikov
Taivo Jõgiaas
Aivar Tarre
Jaan Aarik
author_facet Kristel Möls
Lauri Aarik
Hugo Mändar
Aarne Kasikov
Taivo Jõgiaas
Aivar Tarre
Jaan Aarik
author_sort Kristel Möls
title Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases
title_short Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases
title_full Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases
title_fullStr Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases
title_full_unstemmed Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases
title_sort influence of α-al<sub>2</sub>o<sub>3</sub> template and process parameters on atomic layer deposition and properties of thin films containing high-density tio<sub>2</sub> phases
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/254cd2b1dc7e4b5188ee6668084d8a4b
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