Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases
High-density phases of TiO<sub>2</sub>, such as rutile and high-pressure TiO<sub>2</sub>-II, have attracted interest as materials with high dielectric constant and refractive index values, while combinations of TiO<sub>2</sub>-II with anatase and rutile have been...
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oai:doaj.org-article:254cd2b1dc7e4b5188ee6668084d8a4b2021-11-25T17:15:31ZInfluence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases10.3390/coatings111112802079-6412https://doaj.org/article/254cd2b1dc7e4b5188ee6668084d8a4b2021-10-01T00:00:00Zhttps://www.mdpi.com/2079-6412/11/11/1280https://doaj.org/toc/2079-6412High-density phases of TiO<sub>2</sub>, such as rutile and high-pressure TiO<sub>2</sub>-II, have attracted interest as materials with high dielectric constant and refractive index values, while combinations of TiO<sub>2</sub>-II with anatase and rutile have been considered promising materials for catalytic applications. In this work, the atomic layer deposition of TiO<sub>2</sub> on α-Al<sub>2</sub>O<sub>3</sub> (0 0 0 1) (c-sapphire) was used to grow thin films containing different combinations of TiO<sub>2</sub>-II, anatase, and rutile, and to investigate the properties of the films. The results obtained demonstrate that in a temperature range of 300–400 °C, where transition from anatase to TiO<sub>2</sub>-II and rutile growth occurs in the films deposited on c-sapphire, the phase composition and other properties of a film depend significantly on the film thickness and ALD process time parameters. The changes in the phase composition, related to formation of the TiO<sub>2</sub>-II phase, caused an increase in the density and refractive index, minor narrowing of the optical bandgap, and an increase in the hardness of the films deposited on c-sapphire at T<sub>G</sub> ≥ 400 °C. These properties, together with high catalytic efficiency of mixed TiO<sub>2</sub>-II and anatase phases, as reported earlier, make the films promising for application in various functional coatings.Kristel MölsLauri AarikHugo MändarAarne KasikovTaivo JõgiaasAivar TarreJaan AarikMDPI AGarticletitanium dioxidethin filmsatomic layer depositionanataserutileTiO<sub>2</sub>-IIEngineering (General). Civil engineering (General)TA1-2040ENCoatings, Vol 11, Iss 1280, p 1280 (2021) |
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topic |
titanium dioxide thin films atomic layer deposition anatase rutile TiO<sub>2</sub>-II Engineering (General). Civil engineering (General) TA1-2040 |
spellingShingle |
titanium dioxide thin films atomic layer deposition anatase rutile TiO<sub>2</sub>-II Engineering (General). Civil engineering (General) TA1-2040 Kristel Möls Lauri Aarik Hugo Mändar Aarne Kasikov Taivo Jõgiaas Aivar Tarre Jaan Aarik Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases |
description |
High-density phases of TiO<sub>2</sub>, such as rutile and high-pressure TiO<sub>2</sub>-II, have attracted interest as materials with high dielectric constant and refractive index values, while combinations of TiO<sub>2</sub>-II with anatase and rutile have been considered promising materials for catalytic applications. In this work, the atomic layer deposition of TiO<sub>2</sub> on α-Al<sub>2</sub>O<sub>3</sub> (0 0 0 1) (c-sapphire) was used to grow thin films containing different combinations of TiO<sub>2</sub>-II, anatase, and rutile, and to investigate the properties of the films. The results obtained demonstrate that in a temperature range of 300–400 °C, where transition from anatase to TiO<sub>2</sub>-II and rutile growth occurs in the films deposited on c-sapphire, the phase composition and other properties of a film depend significantly on the film thickness and ALD process time parameters. The changes in the phase composition, related to formation of the TiO<sub>2</sub>-II phase, caused an increase in the density and refractive index, minor narrowing of the optical bandgap, and an increase in the hardness of the films deposited on c-sapphire at T<sub>G</sub> ≥ 400 °C. These properties, together with high catalytic efficiency of mixed TiO<sub>2</sub>-II and anatase phases, as reported earlier, make the films promising for application in various functional coatings. |
format |
article |
author |
Kristel Möls Lauri Aarik Hugo Mändar Aarne Kasikov Taivo Jõgiaas Aivar Tarre Jaan Aarik |
author_facet |
Kristel Möls Lauri Aarik Hugo Mändar Aarne Kasikov Taivo Jõgiaas Aivar Tarre Jaan Aarik |
author_sort |
Kristel Möls |
title |
Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases |
title_short |
Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases |
title_full |
Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases |
title_fullStr |
Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases |
title_full_unstemmed |
Influence of α-Al<sub>2</sub>O<sub>3</sub> Template and Process Parameters on Atomic Layer Deposition and Properties of Thin Films Containing High-Density TiO<sub>2</sub> Phases |
title_sort |
influence of α-al<sub>2</sub>o<sub>3</sub> template and process parameters on atomic layer deposition and properties of thin films containing high-density tio<sub>2</sub> phases |
publisher |
MDPI AG |
publishDate |
2021 |
url |
https://doaj.org/article/254cd2b1dc7e4b5188ee6668084d8a4b |
work_keys_str_mv |
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