A two-dimensional spin field-effect switch

By forming heterostructures of different layered two-dimensional materials, functional spintronic devices may be built by exploiting the materials’ different spin-orbit coupling and spin transport properties. Here, the authors demonstrate a spin switch in a gated structure of graphene and MoS2.

Guardado en:
Detalles Bibliográficos
Autores principales: Wenjing Yan, Oihana Txoperena, Roger Llopis, Hanan Dery, Luis E. Hueso, Fèlix Casanova
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
Materias:
Q
Acceso en línea:https://doaj.org/article/28168df53e894edfb1170315887248b9
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!