A two-dimensional spin field-effect switch
By forming heterostructures of different layered two-dimensional materials, functional spintronic devices may be built by exploiting the materials’ different spin-orbit coupling and spin transport properties. Here, the authors demonstrate a spin switch in a gated structure of graphene and MoS2.
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/28168df53e894edfb1170315887248b9 |
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| Sumario: | By forming heterostructures of different layered two-dimensional materials, functional spintronic devices may be built by exploiting the materials’ different spin-orbit coupling and spin transport properties. Here, the authors demonstrate a spin switch in a gated structure of graphene and MoS2. |
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