A two-dimensional spin field-effect switch
By forming heterostructures of different layered two-dimensional materials, functional spintronic devices may be built by exploiting the materials’ different spin-orbit coupling and spin transport properties. Here, the authors demonstrate a spin switch in a gated structure of graphene and MoS2.
Guardado en:
Autores principales: | Wenjing Yan, Oihana Txoperena, Roger Llopis, Hanan Dery, Luis E. Hueso, Fèlix Casanova |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
Nature Portfolio
2016
|
Materias: | |
Acceso en línea: | https://doaj.org/article/28168df53e894edfb1170315887248b9 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares
-
Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure
por: Wenjing Yan, et al.
Publicado: (2017) -
Spin photogalvanic effect in two-dimensional collinear antiferromagnets
por: Rui-Chun Xiao, et al.
Publicado: (2021) -
Non-Hebbian learning implementation in light-controlled resistive memory devices.
por: Mariana Ungureanu, et al.
Publicado: (2012) -
Spin doping using transition metal phthalocyanine molecules
por: A. Atxabal, et al.
Publicado: (2016) -
Directional interlayer spin-valley transfer in two-dimensional heterostructures
por: John R. Schaibley, et al.
Publicado: (2016)