Origins of genuine Ohmic van der Waals contact between indium and MoS2
Abstract The achievement of ultraclean Ohmic van der Waals (vdW) contacts at metal/transition-metal dichalcogenide (TMDC) interfaces would represent a critical step for the development of high-performance electronic and optoelectronic devices based on two-dimensional (2D) semiconductors. Herein, we...
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| Auteurs principaux: | , , , , , , , , , |
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| Format: | article |
| Langue: | EN |
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Nature Portfolio
2021
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| Accès en ligne: | https://doaj.org/article/28ece4a7e7f6451c9adee24c084ccb74 |
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