Origins of genuine Ohmic van der Waals contact between indium and MoS2

Origins of genuine Ohmic van der Waals contact between indium and MoS2

Abstract The achievement of ultraclean Ohmic van der Waals (vdW) contacts at metal/transition-metal dichalcogenide (TMDC) interfaces would represent a critical step for the development of high-performance electronic and optoelectronic devices based on two-dimensional (2D) semiconductors. Herein, we...

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Autores principales: Bum-Kyu Kim, Tae-Hyung Kim, Dong-Hwan Choi, Hanul Kim, Kenji Watanabe, Takashi Taniguchi, Heesuk Rho, Ju-Jin Kim, Yong-Hoon Kim, Myung-Ho Bae
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
Materials of engineering and construction. Mechanics of materials
TA401-492
Chemistry
QD1-999
Acceso en línea:https://doaj.org/article/28ece4a7e7f6451c9adee24c084ccb74
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