Impurity distribution in n-ZnSe crystals doped with Au

Hall effect, electric conductivity and mobility of charge carriers in n-ZnSe single crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity distribution in the crystals was studied by a method of “layer-by-layer” etching of a sample surface. The m...

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Autores principales: Nedeoglo, Dumitru, Nedeoglo, Natalia, Sirkeli, Vadim
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
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Acceso en línea:https://doaj.org/article/29019729c98c4cc8916fbb57d2c24c52
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