Impurity distribution in n-ZnSe crystals doped with Au
Hall effect, electric conductivity and mobility of charge carriers in n-ZnSe single crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity distribution in the crystals was studied by a method of “layer-by-layer” etching of a sample surface. The m...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/29019729c98c4cc8916fbb57d2c24c52 |
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| Sumario: | Hall effect, electric conductivity and mobility of charge carriers in n-ZnSe single
crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity
distribution in the crystals was studied by a method of “layer-by-layer” etching of a sample
surface. The model, which explains this distribution by a simultaneous diffusion of Zn and Au
atoms during a long-term high-temperature annealing of as-grown crystals in Zn Au melt, is
proposed. |
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