Impurity distribution in n-ZnSe crystals doped with Au

Hall effect, electric conductivity and mobility of charge carriers in n-ZnSe single crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity distribution in the crystals was studied by a method of “layer-by-layer” etching of a sample surface. The m...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Nedeoglo, Dumitru, Nedeoglo, Natalia, Sirkeli, Vadim
Formato:	article
Lenguaje:	EN
Publicado:	D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Materias:	Physics QC1-999 Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/29019729c98c4cc8916fbb57d2c24c52
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:29019729c98c4cc8916fbb57d2c24c52
record_format	dspace
spelling	oai:doaj.org-article:29019729c98c4cc8916fbb57d2c24c522021-11-21T12:11:15ZImpurity distribution in n-ZnSe crystals doped with Au 2537-63651810-648Xhttps://doaj.org/article/29019729c98c4cc8916fbb57d2c24c522005-12-01T00:00:00Zhttps://mjps.nanotech.md/archive/2005/article/3353https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365Hall effect, electric conductivity and mobility of charge carriers in n-ZnSe single crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity distribution in the crystals was studied by a method of “layer-by-layer” etching of a sample surface. The model, which explains this distribution by a simultaneous diffusion of Zn and Au atoms during a long-term high-temperature annealing of as-grown crystals in Zn Au melt, is proposed. Nedeoglo, DumitruNedeoglo, NataliaSirkeli, VadimD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 4, Iss 4, Pp 435-437 (2005)
institution	DOAJ
collection	DOAJ
language	EN
topic	Physics QC1-999 Electronics TK7800-8360
spellingShingle	Physics QC1-999 Electronics TK7800-8360 Nedeoglo, Dumitru Nedeoglo, Natalia Sirkeli, Vadim Impurity distribution in n-ZnSe crystals doped with Au
description	Hall effect, electric conductivity and mobility of charge carriers in n-ZnSe single crystals doped with Au are investigated in the temperature range from 77 to 300 K. Impurity distribution in the crystals was studied by a method of “layer-by-layer” etching of a sample surface. The model, which explains this distribution by a simultaneous diffusion of Zn and Au atoms during a long-term high-temperature annealing of as-grown crystals in Zn Au melt, is proposed.
format	article
author	Nedeoglo, Dumitru Nedeoglo, Natalia Sirkeli, Vadim
author_facet	Nedeoglo, Dumitru Nedeoglo, Natalia Sirkeli, Vadim
author_sort	Nedeoglo, Dumitru
title	Impurity distribution in n-ZnSe crystals doped with Au
title_short	Impurity distribution in n-ZnSe crystals doped with Au
title_full	Impurity distribution in n-ZnSe crystals doped with Au
title_fullStr	Impurity distribution in n-ZnSe crystals doped with Au
title_full_unstemmed	Impurity distribution in n-ZnSe crystals doped with Au
title_sort	impurity distribution in n-znse crystals doped with au
publisher	D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate	2005
url	https://doaj.org/article/29019729c98c4cc8916fbb57d2c24c52
work_keys_str_mv	AT nedeoglodumitru impuritydistributioninnznsecrystalsdopedwithau AT nedeoglonatalia impuritydistributioninnznsecrystalsdopedwithau AT sirkelivadim impuritydistributioninnznsecrystalsdopedwithau
_version_	1718419114066706432

Impurity distribution in n-ZnSe crystals doped with Au

Ejemplares similares