STUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION

Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22%. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin...

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Autores principales: O.V. Devitsky, A.A. Kravtsov, I.A. Sysoev
Formato: article
Lenguaje:RU
Publicado: Tver State University 2021
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Acceso en línea:https://doaj.org/article/290d6cc578e94823a1f299959b8d1fcb
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