STUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION
Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22%. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin...
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| Autores principales: | , , |
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| Formato: | article |
| Lenguaje: | RU |
| Publicado: |
Tver State University
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/290d6cc578e94823a1f299959b8d1fcb |
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| Sumario: | Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22%. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin GaAs1-yBiy films obtained from targets with 1 and 22% of Bi. According to the photoluminescence spectra of thin GaAs1-yBiy films on GaAs substrates, it was determined that the maximum content of Bi in the films did not exceed 2,7%. The results obtained well correlate with the results of the energy dispersive analysis, the composition of films obtained from targets with the Bi content of 1 and 22% GaAs0,975Bi0,025 and GaAs0,973Bi0,027. It was found that the LO (GaBi) phonon mode of associated with disordering during mixing of GaAs and GaBi phases to be at a frequency of 181 cm^(-1). For the thin film obtained on the Si substrate, the mode LO (GaAs) was observed that was less pronounced and shifted by 3 cm^(-1) to the left, while the mode TO (GaAs), forbidden by the selection rules, had a higher intensity and its shift was of about 1 cm^(-1) relative to the frequency of the mode TO (GaAs) of the thin film obtained on the GaAs substrate. |
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