STUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION

Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22%. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin...

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Autores principales:	O.V. Devitsky, A.A. Kravtsov, I.A. Sysoev
Formato:	article
Lenguaje:	RU
Publicado:	Tver State University 2021
Materias:	thin films pulsed laser deposition gaasbi raman photoluminescence Physical and theoretical chemistry QD450-801
Acceso en línea:	https://doaj.org/article/290d6cc578e94823a1f299959b8d1fcb
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id	oai:doaj.org-article:290d6cc578e94823a1f299959b8d1fcb
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spelling	oai:doaj.org-article:290d6cc578e94823a1f299959b8d1fcb2021-12-03T09:37:16ZSTUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION10.26456/pcascnn/2021.13.0962226-44422658-4360https://doaj.org/article/290d6cc578e94823a1f299959b8d1fcb2021-12-01T00:00:00Zhttps://physchemaspects.ru/2021/doi-10-26456-pcascnn-2021-13-096/?lang=enhttps://doaj.org/toc/2226-4442https://doaj.org/toc/2658-4360Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22%. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin GaAs1-yBiy films obtained from targets with 1 and 22% of Bi. According to the photoluminescence spectra of thin GaAs1-yBiy films on GaAs substrates, it was determined that the maximum content of Bi in the films did not exceed 2,7%. The results obtained well correlate with the results of the energy dispersive analysis, the composition of films obtained from targets with the Bi content of 1 and 22% GaAs0,975Bi0,025 and GaAs0,973Bi0,027. It was found that the LO (GaBi) phonon mode of associated with disordering during mixing of GaAs and GaBi phases to be at a frequency of 181 cm^(-1). For the thin film obtained on the Si substrate, the mode LO (GaAs) was observed that was less pronounced and shifted by 3 cm^(-1) to the left, while the mode TO (GaAs), forbidden by the selection rules, had a higher intensity and its shift was of about 1 cm^(-1) relative to the frequency of the mode TO (GaAs) of the thin film obtained on the GaAs substrate.O.V. DevitskyA.A. KravtsovI.A. SysoevTver State Universityarticlethin filmspulsed laser depositiongaasbiramanphotoluminescencePhysical and theoretical chemistryQD450-801RUФизико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 13, Pp 96-105 (2021)
institution	DOAJ
collection	DOAJ
language	RU
topic	thin films pulsed laser deposition gaasbi raman photoluminescence Physical and theoretical chemistry QD450-801
spellingShingle	thin films pulsed laser deposition gaasbi raman photoluminescence Physical and theoretical chemistry QD450-801 O.V. Devitsky A.A. Kravtsov I.A. Sysoev STUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION
description	Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22%. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin GaAs1-yBiy films obtained from targets with 1 and 22% of Bi. According to the photoluminescence spectra of thin GaAs1-yBiy films on GaAs substrates, it was determined that the maximum content of Bi in the films did not exceed 2,7%. The results obtained well correlate with the results of the energy dispersive analysis, the composition of films obtained from targets with the Bi content of 1 and 22% GaAs0,975Bi0,025 and GaAs0,973Bi0,027. It was found that the LO (GaBi) phonon mode of associated with disordering during mixing of GaAs and GaBi phases to be at a frequency of 181 cm^(-1). For the thin film obtained on the Si substrate, the mode LO (GaAs) was observed that was less pronounced and shifted by 3 cm^(-1) to the left, while the mode TO (GaAs), forbidden by the selection rules, had a higher intensity and its shift was of about 1 cm^(-1) relative to the frequency of the mode TO (GaAs) of the thin film obtained on the GaAs substrate.
format	article
author	O.V. Devitsky A.A. Kravtsov I.A. Sysoev
author_facet	O.V. Devitsky A.A. Kravtsov I.A. Sysoev
author_sort	O.V. Devitsky
title	STUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION
title_short	STUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION
title_full	STUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION
title_fullStr	STUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION
title_full_unstemmed	STUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION
title_sort	study of the composition of gaas1-ybiy films obtained by pulsed laser deposition
publisher	Tver State University
publishDate	2021
url	https://doaj.org/article/290d6cc578e94823a1f299959b8d1fcb
work_keys_str_mv	AT ovdevitsky studyofthecompositionofgaas1ybiyfilmsobtainedbypulsedlaserdeposition AT aakravtsov studyofthecompositionofgaas1ybiyfilmsobtainedbypulsedlaserdeposition AT iasysoev studyofthecompositionofgaas1ybiyfilmsobtainedbypulsedlaserdeposition
_version_	1718373316827283456

STUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION

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