STUDY OF THE COMPOSITION OF GaAs1-yBiy FILMS OBTAINED BY PULSED LASER DEPOSITION

Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22%. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: O.V. Devitsky, A.A. Kravtsov, I.A. Sysoev
Formato: article
Lenguaje:RU
Publicado: Tver State University 2021
Materias:
Acceso en línea:https://doaj.org/article/290d6cc578e94823a1f299959b8d1fcb
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares