Magnetic breakdown in 2D hole system at GaAs/Al0.5Ga0.5As heterointerface

The magnetic breakdown development under uniaxial stress has been detected for the first time in 2D hole gas at p-GaAs/Al0.5Ga0.5As heterointerface and indicates the specific character of the FS transformation.

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Minina, N., Bogdanov, E., Savin, A., Ilievsky, A., Polianskii, A.
Format: article
Langue:EN
Publié: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2005
Sujets:
Accès en ligne:https://doaj.org/article/2a122df28289499a900e8868ce96ef0e
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!