Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

Epitaxial integration of perovskite oxide materials with GaN has unlocked the potential to improve functionality and performance in high-power RF and power-switching applications. In this work, we demonstrate structural and electrical properties of high dielectric constant Sr1−xCaxTiO3 epitaxial lay...

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Autores principales: Eric N. Jin, Brian P. Downey, Vikrant J. Gokhale, Jason A. Roussos, Matthew T. Hardy, Tyler A. Growden, Neeraj Nepal, D. Scott Katzer, Jeffrey P. Calame, David J. Meyer
Formato: article
Lenguaje:EN
Publicado: AIP Publishing LLC 2021
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Acceso en línea:https://doaj.org/article/2a93bf3d544c4a9b848e4371edc70cf9
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