Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

Epitaxial integration of perovskite oxide materials with GaN has unlocked the potential to improve functionality and performance in high-power RF and power-switching applications. In this work, we demonstrate structural and electrical properties of high dielectric constant Sr1−xCaxTiO3 epitaxial lay...

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Autores principales:	Eric N. Jin, Brian P. Downey, Vikrant J. Gokhale, Jason A. Roussos, Matthew T. Hardy, Tyler A. Growden, Neeraj Nepal, D. Scott Katzer, Jeffrey P. Calame, David J. Meyer
Formato:	article
Lenguaje:	EN
Publicado:	AIP Publishing LLC 2021
Materias:	Biotechnology TP248.13-248.65 Physics QC1-999
Acceso en línea:	https://doaj.org/article/2a93bf3d544c4a9b848e4371edc70cf9
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spelling	oai:doaj.org-article:2a93bf3d544c4a9b848e4371edc70cf92021-12-01T18:51:23ZElectrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures2166-532X10.1063/5.0063295https://doaj.org/article/2a93bf3d544c4a9b848e4371edc70cf92021-11-01T00:00:00Zhttp://dx.doi.org/10.1063/5.0063295https://doaj.org/toc/2166-532XEpitaxial integration of perovskite oxide materials with GaN has unlocked the potential to improve functionality and performance in high-power RF and power-switching applications. In this work, we demonstrate structural and electrical properties of high dielectric constant Sr1−xCaxTiO3 epitaxial layers grown on AlGaN/GaN/4H-SiC high-electron-mobility transistor structures with compositions ranging from x = 0 to x = 0.53 and oxide film thicknesses ranging from 7 to 126 nm. We show (111) orientation in the SrCaTiO3 (SCTO) thin films using a 1 nm (100) TiO2 buffer layer grown by RF-plasma-assisted oxide molecular beam epitaxy. Current–voltage measurements show up to 5 orders of magnitude reduced leakage with SCTO films when compared to Schottky contacted samples. Capacitance–voltage measurements show minimal hysteresis, an extracted dielectric constant (κ) as high as 290, and a fixed positive interface charge density of 2.38 × 1013 cm−2 at the SCTO/AlGaN interface. The direct integration of the SCTO layer does not significantly affect the two-dimensional electron gas (2DEG) density or the channel mobility with the 2DEG density as a function of SCTO thickness having good agreement with 1D Poisson–Schrödinger simulations. RF characterization of interdigitated capacitors using the SCTO films on unintentionally doped GaN/SiC shows that the films maintain their high κ into microwave frequencies and only exhibit a slight reduction in κ with increased lateral electric fields. These results demonstrate that the integration of a high-κ oxide with GaN can potentially improve electric field management in RF high-electron-mobility transistors and increase the device breakdown voltage without significant degradation to channel transport properties.Eric N. JinBrian P. DowneyVikrant J. GokhaleJason A. RoussosMatthew T. HardyTyler A. GrowdenNeeraj NepalD. Scott KatzerJeffrey P. CalameDavid J. MeyerAIP Publishing LLCarticleBiotechnologyTP248.13-248.65PhysicsQC1-999ENAPL Materials, Vol 9, Iss 11, Pp 111101-111101-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Biotechnology TP248.13-248.65 Physics QC1-999
spellingShingle	Biotechnology TP248.13-248.65 Physics QC1-999 Eric N. Jin Brian P. Downey Vikrant J. Gokhale Jason A. Roussos Matthew T. Hardy Tyler A. Growden Neeraj Nepal D. Scott Katzer Jeffrey P. Calame David J. Meyer Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
description	Epitaxial integration of perovskite oxide materials with GaN has unlocked the potential to improve functionality and performance in high-power RF and power-switching applications. In this work, we demonstrate structural and electrical properties of high dielectric constant Sr1−xCaxTiO3 epitaxial layers grown on AlGaN/GaN/4H-SiC high-electron-mobility transistor structures with compositions ranging from x = 0 to x = 0.53 and oxide film thicknesses ranging from 7 to 126 nm. We show (111) orientation in the SrCaTiO3 (SCTO) thin films using a 1 nm (100) TiO2 buffer layer grown by RF-plasma-assisted oxide molecular beam epitaxy. Current–voltage measurements show up to 5 orders of magnitude reduced leakage with SCTO films when compared to Schottky contacted samples. Capacitance–voltage measurements show minimal hysteresis, an extracted dielectric constant (κ) as high as 290, and a fixed positive interface charge density of 2.38 × 1013 cm−2 at the SCTO/AlGaN interface. The direct integration of the SCTO layer does not significantly affect the two-dimensional electron gas (2DEG) density or the channel mobility with the 2DEG density as a function of SCTO thickness having good agreement with 1D Poisson–Schrödinger simulations. RF characterization of interdigitated capacitors using the SCTO films on unintentionally doped GaN/SiC shows that the films maintain their high κ into microwave frequencies and only exhibit a slight reduction in κ with increased lateral electric fields. These results demonstrate that the integration of a high-κ oxide with GaN can potentially improve electric field management in RF high-electron-mobility transistors and increase the device breakdown voltage without significant degradation to channel transport properties.
format	article
author	Eric N. Jin Brian P. Downey Vikrant J. Gokhale Jason A. Roussos Matthew T. Hardy Tyler A. Growden Neeraj Nepal D. Scott Katzer Jeffrey P. Calame David J. Meyer
author_facet	Eric N. Jin Brian P. Downey Vikrant J. Gokhale Jason A. Roussos Matthew T. Hardy Tyler A. Growden Neeraj Nepal D. Scott Katzer Jeffrey P. Calame David J. Meyer
author_sort	Eric N. Jin
title	Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
title_short	Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
title_full	Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
title_fullStr	Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
title_full_unstemmed	Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures
title_sort	electrical properties of high permittivity epitaxial srcatio3 grown on algan/gan heterostructures
publisher	AIP Publishing LLC
publishDate	2021
url	https://doaj.org/article/2a93bf3d544c4a9b848e4371edc70cf9
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_version_	1718404681958424576

Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

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