Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices

Abstract An outstanding issue with organic devices is the difficulty of simultaneously controlling the lateral size and position of structures at submicron or nanometer scales. In this study, nanocomposite electron beam (EB) organic resists are proved to be excellent candidates for electrically cond...

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Autores principales:	Anri Nakajima, Tetsuo Tabei, Tatsuya Yasukawa
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/2abc5f484dc343d0974596c070f4f7f9
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spelling	oai:doaj.org-article:2abc5f484dc343d0974596c070f4f7f92021-12-02T16:08:23ZFullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices10.1038/s41598-017-04451-92045-2322https://doaj.org/article/2abc5f484dc343d0974596c070f4f7f92017-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-04451-9https://doaj.org/toc/2045-2322Abstract An outstanding issue with organic devices is the difficulty of simultaneously controlling the lateral size and position of structures at submicron or nanometer scales. In this study, nanocomposite electron beam (EB) organic resists are proved to be excellent candidates for electrically conductive and/or memory component materials for submicron or nanometer lateral-scale organic electronic devices. The memory and the resist patterning characteristics are investigated for a positive electron beam resist of ZEP520a containing [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). Regarding the memory characteristics, good programming and excellent retention characteristics are obtained for electrons. The carrier transfer and retention mechanisms are also investigated. Regarding the resist patterning characteristics, it is found that line patterns (square patterns) of ZEP520a containing PCBM can be made with widths (side lengths) of less than 200 nm by using an extremely simple process with only EB exposures and developments. The distribution of PCBM molecules or their aggregations is also clarified in ZEP520a containing PCBM. The results of this study open the door to the simple fabrication of highly integrated flexible memories and electrical wires as well as of single-electron or quantum devices, including quantum information devices and sensitive biosensors for multiplexed and simultaneous diagnoses.Anri NakajimaTetsuo TabeiTatsuya YasukawaNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Anri Nakajima Tetsuo Tabei Tatsuya Yasukawa Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices
description	Abstract An outstanding issue with organic devices is the difficulty of simultaneously controlling the lateral size and position of structures at submicron or nanometer scales. In this study, nanocomposite electron beam (EB) organic resists are proved to be excellent candidates for electrically conductive and/or memory component materials for submicron or nanometer lateral-scale organic electronic devices. The memory and the resist patterning characteristics are investigated for a positive electron beam resist of ZEP520a containing [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). Regarding the memory characteristics, good programming and excellent retention characteristics are obtained for electrons. The carrier transfer and retention mechanisms are also investigated. Regarding the resist patterning characteristics, it is found that line patterns (square patterns) of ZEP520a containing PCBM can be made with widths (side lengths) of less than 200 nm by using an extremely simple process with only EB exposures and developments. The distribution of PCBM molecules or their aggregations is also clarified in ZEP520a containing PCBM. The results of this study open the door to the simple fabrication of highly integrated flexible memories and electrical wires as well as of single-electron or quantum devices, including quantum information devices and sensitive biosensors for multiplexed and simultaneous diagnoses.
format	article
author	Anri Nakajima Tetsuo Tabei Tatsuya Yasukawa
author_facet	Anri Nakajima Tetsuo Tabei Tatsuya Yasukawa
author_sort	Anri Nakajima
title	Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices
title_short	Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices
title_full	Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices
title_fullStr	Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices
title_full_unstemmed	Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices
title_sort	fullerene-containing electrically conducting electron beam resist for ultrahigh integration of nanometer lateral-scale organic electronic devices
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/2abc5f484dc343d0974596c070f4f7f9
work_keys_str_mv	AT anrinakajima fullerenecontainingelectricallyconductingelectronbeamresistforultrahighintegrationofnanometerlateralscaleorganicelectronicdevices AT tetsuotabei fullerenecontainingelectricallyconductingelectronbeamresistforultrahighintegrationofnanometerlateralscaleorganicelectronicdevices AT tatsuyayasukawa fullerenecontainingelectricallyconductingelectronbeamresistforultrahighintegrationofnanometerlateralscaleorganicelectronicdevices
_version_	1718384518918832128

Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices

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