Triple nitrogen-vacancy centre fabrication by C5N4H n ion implantation

Triple nitrogen-vacancy centre fabrication by C5N4H n ion implantation

There is an extensive literature discussing the potential applications of individual nitrogen vacancy centres but some proposed developments require the use of multiple, coupled defects. Here the authors demonstrate a method to fabricate coupled nitrogen vacancy centre triplets.

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Detalles Bibliográficos
Autores principales: Moriyoshi Haruyama, Shinobu Onoda, Taisei Higuchi, Wataru Kada, Atsuya Chiba, Yoshimi Hirano, Tokuyuki Teraji, Ryuji Igarashi, Sora Kawai, Hiroshi Kawarada, Yu Ishii, Ryosuke Fukuda, Takashi Tanii, Junichi Isoya, Takeshi Ohshima, Osamu Hanaizumi
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2019
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Science
Q
Acceso en línea:https://doaj.org/article/2c57252a2dd14cffa491aeedecf61041
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https://doaj.org/article/2c57252a2dd14cffa491aeedecf61041

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