Time-resolved single dopant charge dynamics in silicon
Probing individual impurities will become increasingly important as devices shrink towards the nanoscale. Here Rashidi et al., introduce a method based on time-resolved scanning tunnelling spectroscopy of surface dangling bonds to investigate the dynamics of individual dopants in silicon.
Guardado en:
| Autores principales: | , , , , , , |
|---|---|
| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2016
|
| Materias: | |
| Acceso en línea: | https://doaj.org/article/2d1bb8e3bd82405f904f9b1186ba6e60 |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|