Time-resolved single dopant charge dynamics in silicon
Probing individual impurities will become increasingly important as devices shrink towards the nanoscale. Here Rashidi et al., introduce a method based on time-resolved scanning tunnelling spectroscopy of surface dangling bonds to investigate the dynamics of individual dopants in silicon.
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| Auteurs principaux: | , , , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
Nature Portfolio
2016
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/2d1bb8e3bd82405f904f9b1186ba6e60 |
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