Time-resolved single dopant charge dynamics in silicon

Time-resolved single dopant charge dynamics in silicon

Probing individual impurities will become increasingly important as devices shrink towards the nanoscale. Here Rashidi et al., introduce a method based on time-resolved scanning tunnelling spectroscopy of surface dangling bonds to investigate the dynamics of individual dopants in silicon.

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Autores principales: Mohammad Rashidi, Jacob A. J. Burgess, Marco Taucer, Roshan Achal, Jason L. Pitters, Sebastian Loth, Robert A. Wolkow
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
Materias:
Science
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Acceso en línea:https://doaj.org/article/2d1bb8e3bd82405f904f9b1186ba6e60
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